IndiumV3, Chine, Analysis, bibRecord, 000190

Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method

Identifieur interne : 000190 ( Chine/Analysis ); précédent : 000189; suivant : 000191

Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method

Auteurs : RBID : Pascal:13-0118037

Descripteurs français

Pascal (Inist)
- Diode électroluminescente, Composé ternaire, Nitrure de gallium, Nitrure d'indium, InGaN.

English descriptors

KwdEn :
- Gallium nitride, Indium nitride, Light emitting diode, Ternary compound.

Abstract

A method is presented in this study to determine the junction temperature (T_j ) of LED in terms of the relationship between the diode reverse current (I_R) and T_j. A theoretical model for the dependence of I_R on T_j is derived on the basis of the Shockley equation and is validated by our experimental results. The method is compared with the conventional forward voltage method, and its advantages have been identified.

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Pascal:13-0118037

Le document en format XML

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<author><name>BIQING WU</name>
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<country>République populaire de Chine</country>
<wicri:noRegion>Xiamen 361005</wicri:noRegion>
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<author><name>SIQI LIN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Science and Fujian Engineering Research Center for Solid-State Lighting, Xiamen University</s1>
<s2>Xiamen 361005</s2>
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<author><name sortKey="Shih, Tien Mo" uniqKey="Shih T">Tien-Mo Shih</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Xiamen University</s1>
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<country>République populaire de Chine</country>
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<author><name>YULIN GAO</name>
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<author><name>YIJUN LU</name>
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<author><name>LIHONG ZHU</name>
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<author><name>GUOLONG CHEN</name>
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<author><name>ZHONG CHEN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Science and Fujian Engineering Research Center for Solid-State Lighting, Xiamen University</s1>
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<front><div type="abstract" xml:lang="en">A method is presented in this study to determine the junction temperature (T<sub>j</sub>
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Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method

Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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